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[求助]
求2篇文章的SCI檢索號 已有1人參與
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1. Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2 Solar Energy Thin Film 期刊名：Journal of The Electrochemical Society， 2014年161卷 第6期。 2. Preparation of Cu(In,Ga)S2 Absorber Layers for Thin Film Solar Cell by Annealing of Electrodeposited Cu-Ga-S Precursor Layers 期刊名：：Journal of The Electrochemical Society， 2014年161卷 第14期。 |
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小凡下山
鐵桿木蟲 (著名寫手)
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【答案】應(yīng)助回帖
感謝參與，應(yīng)助指數(shù) +1
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Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2 Solar Energy Thin Film 作者:Niu, GH (Niu, Guanghai)[ 1,2,3 ] ; Yang, S (Yang, Sui)[ 1,2,3 ] ; Li, HX (Li, Hongxing)[ 1,2,3 ] ; Yi, J (Yi, Jie)[ 4 ] ; Wang, MH (Wang, Minghao)[ 1,2,3 ] ; Lv, XX (Lv, Xinxin)[ 1,2,3 ] ; Zhong, JX (Zhong, Jianxin)[ 1,2,3 ] JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 161 期: 6 頁: D333-D338 DOI: 10.1149/2.050406jes 出版年: 2014 查看期刊信息 摘要 CuGaS2 solar energy thin film is fabricated with electrochemical deposition of precursor from deep eutectic solvent (DES) based on choline chloride and urea (commercially known as Reline) to eliminate the interference of hydrogen evolution reaction (HER). The process involves electrodeposition of Cu-Ga precursor on molybdenum substrate from Reline and subsequential annealing in sulfur vapor. The formation of CuGa2 alloy in precursor is observed and pure ternary chalcopyrite CuGaS2 phase in good polycrystalline structure without secondary phase is obtained after thermal treatment. The influence of applied deposition potential on the crystalline phase, morphology, compositions and carrier concentration of the films were investigated. The Cu/Ga ratio decreases with decreasing the deposition potential benefiting the formation of a pure crystallized CuGaS2 thin film. A relative positive deposition potential results in a larger crystalline size benefitting the photoelectrical conversion. Impedance spectroscopy test demonstrates the semiconductor property of the synthesized CuGaS2 polycrystalline thin film is p-type and the carrier concentration increases with negative shift of deposition potential. (C) 2014 The Electrochemical Society. All rights reserved. 關(guān)鍵詞 KeyWords Plus:OPTICAL-PROPERTIES; CHOLINE CHLORIDE; GROWTH; MORPHOLOGY; SI(111) 作者信息 通訊作者地址: Niu, GH (通訊作者) Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China. 地址: [ 1 ] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China [ 2 ] Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China [ 3 ] Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China [ 4 ] Xiangtan Univ, Coll Chem, Xiangtan 411105, Hunan, Peoples R China 電子郵件地址:syang@xtu.edu.cn 基金資助致謝 基金資助機構(gòu) 授權(quán)號 National Nature Science Foundation 51102203 51172191 51202208 National Basic Research Program of China 2012CB921303 Open Fund based on the innovation platform of Hunan colleges and universities 11K061 Hunan Provincial Natural Science Foundation of China 10JJ2003 查看基金資助信息 出版商 ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA 類別 / 分類 研究方向:Electrochemistry; Materials Science Web of Science 類別:Electrochemistry; Materials Science, Coatings & Films 文獻信息 文獻類型:Article 語種:English 入藏號: WOS:000339508600077 ISSN: 0013-4651 eISSN: 1945-7111 期刊信息 Impact Factor (影響因子): Journal Citation Reports® 其他信息 IDS 號: AM0BV Web of Science 核心合集中的 "引用的參考文獻": 32 Web of Science 核心合集中的 "被引頻次": 1 引文網(wǎng)絡(luò) 1 被引頻次 32 引用的參考文獻 查看 Related Records 查看引證關(guān)系圖查看引證關(guān)系圖 當(dāng)有人引用此記錄時接收電子郵件創(chuàng)建引文跟蹤 (數(shù)據(jù)來自 Web of ScienceTM 核心合集) 全部被引頻次計數(shù) 1 / 所有數(shù)據(jù)庫 1 / Web of Science 核心合集 0 / BIOSIS Citation Index 0 / 中國科學(xué)引文數(shù)據(jù)庫 0 / Data Citation Index 0 / SciELO Citation Index 最近的引文 Liu, S. GROWTH, STRUCTURE AND OPTICAL CHARACTERIZATION OF CuGaS2 THIN FILMS OBTAINED BY SPRAY PYROLYSIS. CHALCOGENIDE LETTERS, MAR 2015. |
2樓2015-04-27 15:02:51
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鐵桿木蟲 (著名寫手)
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3樓2015-04-27 15:03:30
小凡下山
鐵桿木蟲 (著名寫手)
- 應(yīng)助: 158 (高中生)
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- 性別: GG
- 專業(yè): 運籌與管理
【答案】應(yīng)助回帖
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Preparation of Cu(In,Ga)S-2 Absorber Layers for Thin Film Solar Cell by Annealing of Electrodeposited Cu-Ga-S Precursor Layers 作者:Yang, S (Yang, Sui)[ 1,2,3 ] ; Niu, GH (Niu, Guanghai)[ 1,2,3 ] ; Wang, MH (Wang, Minghao)[ 1,2,3 ] ; Li, MW (Li, Mingwei)[ 1,2,3 ] ; Li, HX (Li, Hongxing)[ 1,2,3 ] ; Yi, J (Yi, Jie)[ 4 ] ; Zhong, JX (Zhong, Jianxin)[ 1,2,3 ] JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 161 期: 14 頁: D813-D819 DOI: 10.1149/2.0851414jes 出版年: 2014 查看期刊信息 摘要 Cu(In,Ga)S-2 (CIGS) thin film was synthesized on ITO glass substrate via electrodeposition of Cu-Ga-S precursor layer followed by thermal annealing treatment. Our results show that annealing temperature played an important role on the formation of CIGS crystallites. The pure quaternary chalcopyrite CIGS crystal phase in good crystallization with an uniform and compact surface morphology was reproducibly achieved after sintering at 400 degrees C. The metallic In atom diffused from the ITO substrate was found to incorporate to the Cu-Ga-S precursor film and allow the conversion of the quaternary chalcopyrite structure. Several characterization methods including X-ray diffraction (XRD), scanning electron microscope (SEM), energy diffraction spectrum (EDS) and high-resolution transmission electron microscopy (HRTEM) certified the incorporation of In. A possible growth mechanism for explaining the formation of CIGS thin films is proposed and briefly discussed. Completed CIGS solar cell device achieved a 5.75% total area power conversion efficiency under a simulated AM 1.5 illumination. (C) 2014 The Electrochemical Society. All rights reserved. 關(guān)鍵詞 KeyWords Plus:ELECTRICAL-PROPERTIES; BAND-GAP; CUINS2; DEPOSITION; GROWTH; POLYCRYSTALLINE; NANOCRYSTALS; CRYSTALS 作者信息 通訊作者地址: Yang, S (通訊作者) Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China. 地址: [ 1 ] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China [ 2 ] Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China [ 3 ] Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China [ 4 ] Xiangtan Univ, Coll Chem, Xiangtan 411105, Hunan, Peoples R China 電子郵件地址:syang@xtu.edu.cn 基金資助致謝 基金資助機構(gòu) 授權(quán)號 National Nature Science Foundation 51102203 51172191 51202208 National Basic Research Program of China 2012CB921303 Program for Changjiang Scholars and Innovative Research Team in University IRT13093 查看基金資助信息 出版商 ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA 類別 / 分類 研究方向:Electrochemistry; Materials Science Web of Science 類別:Electrochemistry; Materials Science, Coatings & Films 文獻信息 文獻類型:Article 語種:English 入藏號: WOS:000345975500075 ISSN: 0013-4651 eISSN: 1945-7111 期刊信息 Impact Factor (影響因子): Journal Citation Reports® 其他信息 IDS 號: AW0IO Web of Science 核心合集中的 "引用的參考文獻": 44 Web of Science 核心合集中的 "被引頻次": 0 |
4樓2015-04-27 15:06:01
小凡下山
鐵桿木蟲 (著名寫手)
- 應(yīng)助: 158 (高中生)
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- 性別: GG
- 專業(yè): 運籌與管理
5樓2015-04-27 15:06:25
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