 |
 |
 |
 |
 |
 |
||
 |
 |
 |
 |
 |
| 5 | 1/1 | 返回列表 |
| 查看: 4197 | 回復(fù): 29 | |||||||
| 當(dāng)前只顯示滿足指定條件的回帖，點(diǎn)擊這里查看本話題的所有回帖 | |||||||
[交流]
【交流】N摻雜不能形成P型ZnO？ 已有14人參與
|
|||||||
|
最近出版的APL發(fā)表了UCSB研究組Chris G. Van de Walle教授的論文Why nitrogen cannot lead to p-type conductivity in ZnO。[Appl. Phys. Lett. 95, 252105 (2009); doi: 10.1063/1.3274043]此研究一經(jīng)發(fā)出變收到了凝聚態(tài)與材料物理領(lǐng)域的極大關(guān)注。他們的計(jì)算強(qiáng)烈的質(zhì)疑以前的P型ZnO結(jié)果，并指出N摻雜能形成深能級，而不是之前廣泛報(bào)道的淺受主，這說明使用N摻雜并不能形成P型ZnO。 事實(shí)上，早在去年[O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008)]的工作中，他們就指出之前P型ZnO很多結(jié)果并不可靠。不過，該項(xiàng)研究并未引起當(dāng)時(shí)科學(xué)界的足夠重視。然而，最近的很多工作都表明他們結(jié)果的正確性。他們的另外一些研究同時(shí)也證實(shí)Li, N, P, As, or Sb摻雜來實(shí)現(xiàn)受主，并實(shí)現(xiàn)p型摻雜的方式是錯(cuò)誤的。[A. Janotti, E. Snow, and C. G. Van de Walle, Appl. Phys. Lett. 95, 172109 (2009)]. 把工作重新拉回到間隙子的摻雜方式中來。 —————————————————— 下面為轉(zhuǎn)載 Dec 23, 2009 Computational scientists at the University of California, Santa Barbara (UCSB), have provided convincing evidence that nitrogen, which is widely believed to be a shallow acceptor in ZnO, is in fact a very deep acceptor and cannot lead to p-type conductivity. ZnO has been intensively pursued as an optoelectronic material, in hopes of developing it into a wide-band-gap light emitter that would compete with GaN-but with the advantage that large single-crystal substrates are commercially available. A large part of the effort has been directed at establishing p-type doping, which is very challenging in wide-band-gap oxides in general. Dozens of papers claiming observations of p-type conductivity have appeared in the scientific literature. However, independent verification of these reports has been lacking, as have convincing demonstrations of pn junctions. The UCSB team, consisting of John Lyons, Anderson Janotti, and Professor Chris Van de Walle, performed cutting-edge first-principles calculations based on the hybrid functional methodology. In an Applied Physics Letter published online today [Appl. Phys. Lett. 95, 252105 (2009); doi: 10.1063/1.3274043] they report that nitrogen acceptors have an ionization energy of 1.3 eV-much too large to enable p-type doping. They also address why the behavior of nitrogen has been misinterpreted in so many of the previous investigations. In optical studies, the near-band-gap photoluminescence line most commonly associated with nitrogen is now known to be caused by stacking faults. Optical absorption and emission associated with the nitrogen deep acceptor in fact occurs at much lower energies, at wavelengths that have been all but ignored in prior studies (see Figure). When it comes to electrical measurements of acceptor-doped ZnO, the researchers point out there are many potential pitfalls, as addressed in a UCSB paper published last year [O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008)], casting doubt on most of the p-type conductivity reports published to date. Does this mean that all hope for p-type ZnO has to be abandoned? “We are convinced that none of the substitutional acceptors (including Li, N, P, As, or Sb) will yield p-type conduction” commented Project Scientist Anderson Janotti. “Interstitial doping, on the other hand, still looks promising, although it may be difficult to accomplish in actual device fabrication.” UCSB results on fluorine doping were the subject of another recent publication [A. Janotti, E. Snow, and C. G. Van de Walle, Appl. Phys. Lett. 95, 172109 (2009)]. “Our finding that nitrogen is not a shallow acceptor will come as a disappointment to many who are excited about ZnO as an optoelectronic material” said Van de Walle. “However, we hope it will contribute to resolving the conflicting and controversial results that have plagued the literature, and will refocus ZnO research efforts on the many exciting applications that do not require ambipolar doping, such as transistors and sensors.” Optical absorption and emission associated with nitrogen, a deep acceptor in ZnO. The diagram, based on first-principles computations, illustrates optical absorption by nitrogen acceptors being triggered by green light (2.4 eV), and emission (photoluminescence) occurring at red wavelengths (1.7 eV). Previous optical investigations have focused on the energy range near the ZnO band gap (3.4 eV, UV), due to the misconception that nitrogen was a shallow acceptor. [ Last edited by dawnlight on 2010-1-24 at 22:03 ] |
回復(fù)此樓» 收錄本帖的淘帖專輯推薦
 LED應(yīng)用研究 | 半導(dǎo)體 LED等 | 文獻(xiàn)欣賞 | ITO FTO etc |
» 猜你喜歡
283分材料與化工求調(diào)劑
已經(jīng)有12人回復(fù)
-
349求調(diào)劑
已經(jīng)有7人回復(fù)
-
296材料專碩求調(diào)劑
已經(jīng)有11人回復(fù)
-
一志愿上海海洋大學(xué)083200食品學(xué)碩，求調(diào)劑，接受其他專業(yè)
已經(jīng)有7人回復(fù)
-
材料340分調(diào)劑
已經(jīng)有8人回復(fù)
-
316求調(diào)劑
已經(jīng)有13人回復(fù)
-
321求調(diào)劑
已經(jīng)有11人回復(fù)
-
315求調(diào)劑
已經(jīng)有6人回復(fù)
-
330分求調(diào)劑
已經(jīng)有13人回復(fù)
-
化工調(diào)劑303分，過四級
已經(jīng)有9人回復(fù)
» 本主題相關(guān)商家推薦: (我也要在這里推廣)
» 本主題相關(guān)價(jià)值貼推薦，對您同樣有幫助:
- PN結(jié)的形成和相關(guān)問題
已經(jīng)有11人回復(fù)
- 界面摻雜調(diào)控取得新進(jìn)展：ZnO單納米線光電性能實(shí)現(xiàn)優(yōu)質(zhì)集成
已經(jīng)有18人回復(fù)
- 真心求教：Cu2O摻雜過渡金屬的磁性能。問題非常具體，希望懂的給指點(diǎn)一下
已經(jīng)有8人回復(fù)
- Al摻雜ZnO中Al的摻雜形成能
已經(jīng)有3人回復(fù)
- 本征多晶硅是N型的還是P型的？
已經(jīng)有7人回復(fù)
- 請教pn結(jié)深度相關(guān)問題
已經(jīng)有6人回復(fù)
- 求助，使用MS計(jì)算不同比例N摻雜ZnO的禁帶寬度，結(jié)果令人不解
已經(jīng)有7人回復(fù)
- 摻雜化學(xué)勢及形成能計(jì)算
已經(jīng)有6人回復(fù)
- ZnO被Ti4＋取代后是n型還是p型
已經(jīng)有4人回復(fù)
- N型或P型半導(dǎo)體，雜質(zhì)摻雜是身多少
已經(jīng)有6人回復(fù)
- 半導(dǎo)體氧化鋅薄膜
已經(jīng)有15人回復(fù)
- 關(guān)于氧化鋅發(fā)光的問題
已經(jīng)有16人回復(fù)
- 摻雜后形成能的計(jì)算
已經(jīng)有35人回復(fù)
- p型 N摻雜ZnO研究進(jìn)展**JACS文章***
已經(jīng)有309人回復(fù)
- Li/Na摻雜ZnO的的缺陷位置標(biāo)記符號的意義
已經(jīng)有9人回復(fù)
- 導(dǎo)電聚合物的n型摻雜p型摻雜是啥呀
已經(jīng)有8人回復(fù)
- ChinaNano歸來的觀感
已經(jīng)有19人回復(fù)
- 水熱法進(jìn)行ZnO納米結(jié)構(gòu)摻雜
已經(jīng)有16人回復(fù)
- 【請教】Ag摻雜ZnO的顏色
已經(jīng)有15人回復(fù)
scnulijun
鐵蟲 (小有名氣)
- 應(yīng)助: 0 (幼兒園)
- 金幣: -1.7
- 帖子: 155
- 在線: 22.4小時(shí)
- 蟲號: 315716
- 注冊: 2007-03-03
- 專業(yè): 電力電子學(xué)
7樓2010-01-30 13:24:41
211985:mad:
木蟲 (著名寫手)
格格
- FPI: 1
- 應(yīng)助: 0 (幼兒園)
- 金幣: 3183.8
- 散金: 335
- 紅花: 29
- 帖子: 2483
- 在線: 624.3小時(shí)
- 蟲號: 881385
- 注冊: 2009-10-23
- 性別: MM
- 專業(yè): 運(yùn)動生理學(xué)
3樓2010-01-25 13:48:24
pretender
銀蟲 (小有名氣)
- 應(yīng)助: 1 (幼兒園)
- 金幣: 9.5
- 帖子: 137
- 在線: 64.5小時(shí)
- 蟲號: 53066
- 注冊: 2004-09-12
- 性別: GG
- 專業(yè): 凝聚態(tài)物性 II ：電子結(jié)構(gòu)
4樓2010-01-28 17:21:14
元小雪
木蟲 (職業(yè)作家)
- 應(yīng)助: 0 (幼兒園)
- 貴賓: 0.947
- 金幣: 2216.5
- 散金: 2484
- 紅花: 2
- 帖子: 3767
- 在線: 124.5小時(shí)
- 蟲號: 471521
- 注冊: 2007-12-01
- 性別: MM
- 專業(yè): 物理/
5樓2010-01-28 17:48:38
| 最具人氣熱帖推薦 [查看全部] | 作者 | 回/看 | 最后發(fā)表 | |
|---|---|---|---|---|
|
[考研] 282求調(diào)劑 +18 | ycy1201 2026-04-01 | 20/1000 |
|
|---|---|---|---|---|
|
|
[考研] 285求調(diào)劑 +5 | AZMK 2026-04-02 | 7/350 |
|
|
[考研] 0703化學(xué) +4 | goldtt 2026-04-02 | 6/300 |
|
|
|
[考研] 312 化工或制藥調(diào)劑 +4 | 小小墨123 2026-04-02 | 5/250 |
|
|
|
[考研] 材料專碩322分 +9 | 哈哈哈吼吼吼哈 2026-04-02 | 9/450 |
|
|
|
[考研] 085600，320分求調(diào)劑 +5 | 大饞小子 2026-04-02 | 5/250 |
|
|
|
[考研] 化學(xué)308分調(diào)劑 +14 | 你好明天你好 2026-03-30 | 15/750 |
|
|
|
[考研] 266分，一志愿電氣工程，本科材料，求材料專業(yè)調(diào)劑 +4 | 哇呼哼呼哼 2026-04-02 | 4/200 |
|
|
|
[考研] 289求調(diào)劑 +23 | 新時(shí)代材料 2026-03-27 | 26/1300 |
|
|
|
[考研] 材料科學(xué)與工程調(diào)劑 +18 | 深V宿舍吧 2026-03-30 | 19/950 |
|
|
|
[考研] 301求調(diào)劑 +13 | A_JiXing 2026-04-01 | 13/650 |
|
|
|
[考研] 一志愿北交大材料工程，總分358 +4 | cs0106 2026-04-01 | 4/200 |
|
|
|
[考研] 295材料工程專碩求調(diào)劑 +19 | 1428151015 2026-03-27 | 19/950 |
|
|
|
[考研] 建環(huán)，能源，土木老師路過看一看�。�！ +4 | 嘿嘿uu 2026-04-01 | 4/200 |
|
|
|
[考研] 287求調(diào)劑 +17 | land xuxu 2026-03-26 | 17/850 |
|
|
|
[考研] 吉大生物學(xué)326分求調(diào)劑 +3 | sunnyupup 2026-03-31 | 3/150 |
|
|
|
[考研] 283求調(diào)劑（080500） +14 | A child 2026-03-27 | 14/700 |
|
|
|
[考研] 348求調(diào)劑 +6 | 小懶蟲不懶了 2026-03-28 | 6/300 |
|
|
|
[考研] 086000生物與醫(yī)藥調(diào)劑 +5 | Feisty。 2026-03-28 | 9/450 |
|
|
|
[考研] 266求調(diào)劑 +11 | 陽陽哇塞 2026-03-27 | 12/600 |
|