 |
 |
 |
 |
 |
 |
||
 |
 |
 |
 |
 |
小木蟲論壇-學術科研互動平臺 » 材料區(qū) » 功能材料 » 基礎研究 » 【交流】N摻雜不能形成P型ZnO？
| 5 | 1/1 | 返回列表 |
| 查看: 4196 | 回復: 29 | |||||||
| 當前只顯示滿足指定條件的回帖，點擊這里查看本話題的所有回帖 | |||||||
[交流]
【交流】N摻雜不能形成P型ZnO？ 已有14人參與
|
|||||||
|
最近出版的APL發(fā)表了UCSB研究組Chris G. Van de Walle教授的論文Why nitrogen cannot lead to p-type conductivity in ZnO。[Appl. Phys. Lett. 95, 252105 (2009); doi: 10.1063/1.3274043]此研究一經(jīng)發(fā)出變收到了凝聚態(tài)與材料物理領域的極大關注。他們的計算強烈的質(zhì)疑以前的P型ZnO結果，并指出N摻雜能形成深能級，而不是之前廣泛報道的淺受主，這說明使用N摻雜并不能形成P型ZnO。 事實上，早在去年[O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008)]的工作中，他們就指出之前P型ZnO很多結果并不可靠。不過，該項研究并未引起當時科學界的足夠重視。然而，最近的很多工作都表明他們結果的正確性。他們的另外一些研究同時也證實Li, N, P, As, or Sb摻雜來實現(xiàn)受主，并實現(xiàn)p型摻雜的方式是錯誤的。[A. Janotti, E. Snow, and C. G. Van de Walle, Appl. Phys. Lett. 95, 172109 (2009)]. 把工作重新拉回到間隙子的摻雜方式中來。 —————————————————— 下面為轉載 Dec 23, 2009 Computational scientists at the University of California, Santa Barbara (UCSB), have provided convincing evidence that nitrogen, which is widely believed to be a shallow acceptor in ZnO, is in fact a very deep acceptor and cannot lead to p-type conductivity. ZnO has been intensively pursued as an optoelectronic material, in hopes of developing it into a wide-band-gap light emitter that would compete with GaN-but with the advantage that large single-crystal substrates are commercially available. A large part of the effort has been directed at establishing p-type doping, which is very challenging in wide-band-gap oxides in general. Dozens of papers claiming observations of p-type conductivity have appeared in the scientific literature. However, independent verification of these reports has been lacking, as have convincing demonstrations of pn junctions. The UCSB team, consisting of John Lyons, Anderson Janotti, and Professor Chris Van de Walle, performed cutting-edge first-principles calculations based on the hybrid functional methodology. In an Applied Physics Letter published online today [Appl. Phys. Lett. 95, 252105 (2009); doi: 10.1063/1.3274043] they report that nitrogen acceptors have an ionization energy of 1.3 eV-much too large to enable p-type doping. They also address why the behavior of nitrogen has been misinterpreted in so many of the previous investigations. In optical studies, the near-band-gap photoluminescence line most commonly associated with nitrogen is now known to be caused by stacking faults. Optical absorption and emission associated with the nitrogen deep acceptor in fact occurs at much lower energies, at wavelengths that have been all but ignored in prior studies (see Figure). When it comes to electrical measurements of acceptor-doped ZnO, the researchers point out there are many potential pitfalls, as addressed in a UCSB paper published last year [O. Bierwagen, T. Ive, C. G. Van de Walle, and J. S. Speck, Appl. Phys. Lett. 93, 242108 (2008)], casting doubt on most of the p-type conductivity reports published to date. Does this mean that all hope for p-type ZnO has to be abandoned? “We are convinced that none of the substitutional acceptors (including Li, N, P, As, or Sb) will yield p-type conduction” commented Project Scientist Anderson Janotti. “Interstitial doping, on the other hand, still looks promising, although it may be difficult to accomplish in actual device fabrication.” UCSB results on fluorine doping were the subject of another recent publication [A. Janotti, E. Snow, and C. G. Van de Walle, Appl. Phys. Lett. 95, 172109 (2009)]. “Our finding that nitrogen is not a shallow acceptor will come as a disappointment to many who are excited about ZnO as an optoelectronic material” said Van de Walle. “However, we hope it will contribute to resolving the conflicting and controversial results that have plagued the literature, and will refocus ZnO research efforts on the many exciting applications that do not require ambipolar doping, such as transistors and sensors.” Optical absorption and emission associated with nitrogen, a deep acceptor in ZnO. The diagram, based on first-principles computations, illustrates optical absorption by nitrogen acceptors being triggered by green light (2.4 eV), and emission (photoluminescence) occurring at red wavelengths (1.7 eV). Previous optical investigations have focused on the energy range near the ZnO band gap (3.4 eV, UV), due to the misconception that nitrogen was a shallow acceptor. [ Last edited by dawnlight on 2010-1-24 at 22:03 ] |
回復此樓» 收錄本帖的淘帖專輯推薦
 LED應用研究 | 半導體 LED等 | 文獻欣賞 | ITO FTO etc |
» 猜你喜歡
請問共同通訊和共同一作的認可度問題
已經(jīng)有4人回復
-
286分調(diào)劑
已經(jīng)有22人回復
-
材料調(diào)劑
已經(jīng)有4人回復
-
085600 295分求調(diào)劑
已經(jīng)有19人回復
-
材料調(diào)劑
已經(jīng)有4人回復
-
302求調(diào)劑一志愿華中師范大學
已經(jīng)有3人回復
-
環(huán)境285分，過六級，求調(diào)劑
已經(jīng)有5人回復
-
08工科求調(diào)劑290分
已經(jīng)有8人回復
-
321求調(diào)劑 一志愿 浙江工業(yè)大學生物醫(yī)藥
已經(jīng)有4人回復
-
266分，一志愿電氣工程，本科材料，求材料專業(yè)調(diào)劑
已經(jīng)有4人回復
» 本主題相關商家推薦: (我也要在這里推廣)
» 本主題相關價值貼推薦，對您同樣有幫助:
- PN結的形成和相關問題
已經(jīng)有11人回復
- 界面摻雜調(diào)控取得新進展：ZnO單納米線光電性能實現(xiàn)優(yōu)質(zhì)集成
已經(jīng)有18人回復
- 真心求教：Cu2O摻雜過渡金屬的磁性能。問題非常具體，希望懂的給指點一下
已經(jīng)有8人回復
- Al摻雜ZnO中Al的摻雜形成能
已經(jīng)有3人回復
- 本征多晶硅是N型的還是P型的？
已經(jīng)有7人回復
- 請教pn結深度相關問題
已經(jīng)有6人回復
- 求助，使用MS計算不同比例N摻雜ZnO的禁帶寬度，結果令人不解
已經(jīng)有7人回復
- 摻雜化學勢及形成能計算
已經(jīng)有6人回復
- ZnO被Ti4＋取代后是n型還是p型
已經(jīng)有4人回復
- N型或P型半導體，雜質(zhì)摻雜是身多少
已經(jīng)有6人回復
- 半導體氧化鋅薄膜
已經(jīng)有15人回復
- 關于氧化鋅發(fā)光的問題
已經(jīng)有16人回復
- 摻雜后形成能的計算
已經(jīng)有35人回復
- p型 N摻雜ZnO研究進展**JACS文章***
已經(jīng)有309人回復
- Li/Na摻雜ZnO的的缺陷位置標記符號的意義
已經(jīng)有9人回復
- 導電聚合物的n型摻雜p型摻雜是啥呀
已經(jīng)有8人回復
- ChinaNano歸來的觀感
已經(jīng)有19人回復
- 水熱法進行ZnO納米結構摻雜
已經(jīng)有16人回復
- 【請教】Ag摻雜ZnO的顏色
已經(jīng)有15人回復
tan-tt
木蟲 (小有名氣)
- 應助: 2 (幼兒園)
- 金幣: 4367.6
- 散金: 51
- 紅花: 2
- 帖子: 230
- 在線: 131.3小時
- 蟲號: 589937
- 注冊: 2008-08-30
- 性別: GG
- 專業(yè): 半導體材料物理與器件
★ ★ ★ ★ ★ ★
小木蟲(金幣+0.5):給個紅包，謝謝回帖交流
dawnlight(金幣+5):感謝分享，歡迎討論，歡迎常來 2010-02-03 22:37
小木蟲(金幣+0.5):給個紅包，謝謝回帖交流
dawnlight(金幣+5):感謝分享，歡迎討論，歡迎常來 2010-02-03 22:37
|
計算結果未必可靠吧，很多人沒做出來ZnO-p摻雜，不代表就做不出來P摻雜。只是表明這個不是那么容易的，也許有些細節(jié)上的實驗問題。 當然本人也是懷疑浙大關于P摻雜ZnO結果的證實性，之所以懷疑，是因為他們沒有公開站出來反擊這些懷疑，如果沒有問題，給其他一些懷疑的人，寄一些P型ZnO，讓他們?nèi)y試。不過也許是他們不屑這么做，但是，我就是懷疑他們。 關于計算N摻雜是否形成深能級，與p摻雜應該是不矛盾的吧。P摻雜，我以為主要是改變能帶結構，是雜質(zhì)的擴展態(tài)與原來的能帶結構相互耦合的結果，而是否形成深能級，則與電離能之類的有關，是局域態(tài)的缺陷。二者未必是沖突的。（一些揣測） |
9樓2010-02-03 21:50:21
211985:mad:
木蟲 (著名寫手)
格格
- FPI: 1
- 應助: 0 (幼兒園)
- 金幣: 3183.8
- 散金: 335
- 紅花: 29
- 帖子: 2483
- 在線: 624.3小時
- 蟲號: 881385
- 注冊: 2009-10-23
- 性別: MM
- 專業(yè): 運動生理學
3樓2010-01-25 13:48:24
pretender
銀蟲 (小有名氣)
- 應助: 1 (幼兒園)
- 金幣: 9.5
- 帖子: 137
- 在線: 64.5小時
- 蟲號: 53066
- 注冊: 2004-09-12
- 性別: GG
- 專業(yè): 凝聚態(tài)物性 II ：電子結構
4樓2010-01-28 17:21:14
元小雪
木蟲 (職業(yè)作家)
- 應助: 0 (幼兒園)
- 貴賓: 0.947
- 金幣: 2216.5
- 散金: 2484
- 紅花: 2
- 帖子: 3767
- 在線: 124.5小時
- 蟲號: 471521
- 注冊: 2007-12-01
- 性別: MM
- 專業(yè): 物理/
5樓2010-01-28 17:48:38
| 最具人氣熱帖推薦 [查看全部] | 作者 | 回/看 | 最后發(fā)表 | |
|---|---|---|---|---|
|
[考研]
 一志愿北京科技材料科學與工程288分，求調(diào)劑
+9
|
是辰啊 2026-04-02 | 9/450 |
|
|---|---|---|---|---|
|
|
[考研] 085900土木水利336分求調(diào)劑 +4 | Zhangjiangj 2026-03-31 | 6/300 |
|
|
[考研] 一志愿南師大0703化學 275求調(diào)劑 +6 | Ripcord上岸 2026-03-27 | 6/300 |
|
|
|
[考研] 261求B區(qū)調(diào)劑 +5 | 明仔· 2026-04-01 | 7/350 |
|
|
|
[考研] 計算機265跨調(diào)環(huán)境 +5 | Yumeng_6 2026-03-27 | 5/250 |
|
|
|
[考研] 266求調(diào)劑 +4 | 學員97LZgn 2026-04-02 | 4/200 |
|
|
|
[考研] 一志愿安徽大學計算機科學與技術學碩，331分求調(diào)劑 +5 | 蔣昌鵬qtj 2026-04-01 | 5/250 |
|
|
|
[考研] 085602化學工程268分蹲調(diào)劑 +8 | 月照花林。 2026-04-01 | 8/400 |
|
|
|
[考研] 309求調(diào)劑 +19 | 誰不是少年 2026-03-29 | 19/950 |
|
|
|
[考研] 322求調(diào)劑 +8 | 三水sss 2026-04-01 | 8/400 |
|
|
|
[考研] 0710生物學求調(diào)劑！ +6 | 敘述文 2026-03-31 | 6/300 |
|
|
|
[考研] 318求調(diào)劑 +3 | 篤行致遠. 2026-03-31 | 3/150 |
|
|
|
[考研] 求調(diào)劑 生物學 377分 +6 | zzll03 2026-03-31 | 6/300 |
|
|
|
[考研] 080500-315分復試調(diào)劑 +9 | 上岸3821 2026-03-31 | 9/450 |
|
|
|
[考研] 263求調(diào)劑 +3 | DDDDuu 2026-03-27 | 3/150 |
|
|
|
[考研] 一志愿大連理工大學，機械工程學碩，341 +3 | 西瓜田的守望者 2026-03-30 | 3/150 |
|
|
|
[考研] 279求調(diào)劑 +12 | j的立方 2026-03-29 | 12/600 |
|
|
|
[考研] 一志愿中南大學化學0703總分337求調(diào)劑 +6 | niko- 2026-03-27 | 6/300 |
|
|
|
[考研] 279求調(diào)劑 +4 | 蝶舞輕繞 2026-03-29 | 4/200 |
|
|
|
[考研] 081200-11408-276學碩求調(diào)劑 +6 | 崔wj 2026-03-26 | 6/300 |
|